|
Product
Overview |
| |
| Quad flat
package (QFP) is popular among quad packages. The
fine lead frame via etching or stamping process
enables QFP to contain more leads and feature a
smaller profile (the lead width can be as small
as 0.16mm while the lead pitch is 0.4mm). The thinner
and flexible leads in a gull-wing shape also provide
better 2nd-level reliability (package to PCB). |
| |
| QFP with Heat
Spreader |
| |
| The package
with drop-in HS can allow more than 50% power dissipation
when compared with the conventional package (e.g.
in QFP 28x28mm, the allowable power of standard
type and the type with HS is about 2.1W and 3.5W
respectively). This drop-in HS drives off the heat
from the chip more easily by extending the conduction
area, and transfers more heat via the lead frame.
QFP with drop-in HS is applicable to package sizes
of 14x20, 28x28, and 32x32 mm. |


 |
|
Application |
| |
Products
Portable consumer products (PDA, Digital camera, etc.)
System board
Power controller
Quad packages have been used for years to meet the increasing challenges of faster processors/controllers, ASICs, DSPs, gate arrays, logic, memory ICs (EEPROM, Flash, DRAM & SRAM), PC chipset, video-DAC, multi- media and other related applications. Especial in upgrade thermal performance of conventional QFP, and make HS-QFP suitable in high thermal application like Power & Voltage Regulator, Power Amplifier, etc. |


 |
|
Features |
| |
|
High-speed data processing
High density interconnection
Cost Competitive
MCM/ Stack structure design
High thermal conductive
Fine Pitch wireobond capability
Pb-free process ready and available
JEDEC standard compliant |


 |
|
Reliability |
|
|
|
|


 |
|
Design
Rule |
| |
Minimum
Ink Size: 15mil (381
um) diameter or non-ink with wafer mapping |
| |
| Minimum
Sawing street width: 3.0 mil (76.2
um) |
| |
| Wafer
Thickness: Back grinding
is required if the thickness exceeds ASE's stipulated
range |
| |
|
Stack Die for QFP
Wafer thickness: 10 ± 1 mils
Minimum distance of die edge between top die and bottom die: 30 mils
Minimum distance from bottom die edge to pad edge: 8 mils (without Ground Bond)
Minimum distance from bottom die edge to pad edge: 30 mils (without Ground Bond) |
|



|
|
Performance |
| |
|
Electrical |
| |
| Electrical
Characterization (Contact ASE R&D
for details.) |
| |
| QFP |
|
 |
|
|
| (1mm=39.37mil;
1mil=25.4um) |
| The
above electrical data is for reference only. |
| |
| Thermal
(Contact ASE R&D for details.) |
| |
|
| (1mm=39.37mil;
1mil=25.4um) |
| The above
electrical data is for reference only. |
|



|
|
Standard
Process/Materials |
| |
|
| Optional process: wafer back grinding/ die coating/ topside Ink marking/dry packing. |


 |
| BOM
of Pb Free Process |
| |
|
|



|
|
Package
Offering |
| |
 |
| The
alphabetical notation refers to: |
| A1
Stand-off |
| A2
Body thickness |
| L1
Lead length |
| b
Lead width |
| c
L/F thickness |
| e
Lead pitch |
| |
| Overall
thickness is the sum of A1 and A2. |
| |
|
|


 |
| Packing
& Shipping |
| |
|


 |