CSP Low & Thin-VFBGA
 

Product Overview

 
The total thickness of the package Very Fine Pitch (VFBGA) BGA can be as little as 1.0 mm, due to significant improvement in substrate and die thinning technology.
Key benefits:
* Small, thin and light
* Low cost and High volume production solution
* Competitive reliability performance (MSL 2)


Application
 
VFBGA is commonly used in cellular phones, hard disk drives, PLD's and digital cameras. Increasing demand for thin packages with high density performance make VFBGA a highly competitive and reliable package solution to meet this demand. This package is highly recommended for DRAM, SRAM, Flash, EEPROM, ASIC, PLD & analog products.


Features

 

 

3.9x3.9 mm to 15x15 mm body size available
5~400 I/O
0.5/0.65/0.75/0.8 mm in ball pitch
Rigid & customized routing substrate design
High density interconnection
Full in-house design capability
Fine Pitch wirebond capability
Low assembly cost
Self-alignment during re-flow
High speed performance
Lower profile (Package thickness)
Pb Free & Green Package process ready and available
Ease of thermal and electrical management
Ease of routing
JEDEC standard criteria


Reliability

 
The VFBGA package have passed MSL2@240°C MSL 3@260°C (Pb Free and Green requirement.)
 
MSL2@240°C  
 
MSL3@260°C  
 



Package Structure

 
 
Thickness (Total) 1.0 mm Max
Mold cap thickness (A) 0.45 mm
Substrate thickness (B) 0.21 mm
Solder ball height (C) 0.27 mm
Wafer thickness (D) 6 mils
Epoxy (E) 1.5 mils (Max.)
Loop height (F) 5.5 mils (Max.)


Design Rule
 

 
Item Description Criteria (um)
G-A Exposed bond finger metal (Double bond) 406 min.
G-B Exposed bond finger metal (Single bond) 280 min.
G-C Max. bond wire length 5000 um (200 mils) Max.
G-D Bond wire center to adjacent bond pad center 50 min.
G-E Die bond pad pitch 60 min.
G-F Bond wire span over bond finger before target point 90 min.
G-G Lead length in line with bond wire beyond target point 45 min.
G-H Bond wire center to adjacent bond finger (Bottom die only) 63.5 min.
G-I Bond finger width 95 min.
G-K Wire center to wire center distance 45 min.
G-L Wire bond pad size 60 min.
G-M Bonding pad to package edge 1000 min.



Performance

 
Electrical
 
The above electrical data is for reference only.
 
Thermal
 
 
 
 
 
 
 
The above thermal data is for reference only.



Standard Process/Materials

 
V(F)BGA  
Process Stage
Wafer Grinding
Wafer Mount
Wafer Saw/Clean
2nd Optical (Gate)
Die Attach
Die Attach Cure
Plasma Clean
Wire Bond
3rd Optical (Gate)
Plasma Clean
Mold
Top Side Marking
Post Mold Cure
Solder Ball Mount
Flux Clean
Substrate Sawing
Final Visual Inspection
Packing



Package Offering

 
The alphabetical notation refers to:
D1 Pkg size
E1 Pkg size
A Pkg overall thickness
A1 Stand-off
b Ball diameter
c Substrate thickness
e Ball pitch
 
 



Processes Flow
 
 


Packing & Shipping